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H3200 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H3200
APPLICATIONS
Low Noise Audio Amplifier Application.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation
300mW
VCBO Collector-Base Voltage
1 20 V
VCEO Collector-Emitter Voltage
1 20 V
VEBO Emitter - Base Voltage
5V
IC Collector Current
10 0mA
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ
BVCEO Collector-Emitter Breakdown Voltage
ICBO Collector Cut-off Current
IEBO
HFE
VCE(sat)
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
VBE(ON)
fT
Cob
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
NF Noise Figure
NF
NF
hFE Classification
Max Unit
Test Conditions
IC=1mA, IB=0
VCB=120V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC=10mA, IB=1mA
VCE=6V, IC=2mA
VCE=6V, IC=1mA
VCB=10V, IE=0 f=1
VCE=6V, IC=100
f=10KHz,Rg=10K
VCE=6V, IC=100
f=1KHz,Rg=10K
VCE=6V, IC=100
f=1KHz,Rg=100K
GR
BL