H3198 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H3198
APPLICATIONS
General Purpose And Switching Applications.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
400mW
V_CBO Collector-Base Voltage
60V
V_CEO Collector-Emitter Voltage
50V
V_EBO Emitter - Base Voltage
5V
I_C Collector Current
150mA
Ib Base Current
50mA
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
HFE(1)
HFE(2)
VCE(sat)
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
VBE(sat)
fT
Cob
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
NF Noise Figure
hFE Classification
Max Unit
Test Conditions
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=6V, I_C=2mA
V_CE=6V, I_C=150mA
I_C=100mA, I_B=10mA
I_C=100mA, I_B=10mA
V_CE=10V, I_C=1mA
V_CB=10V, I_E=0 f=1
V_CE=6V, I_C=100
f=1KHz,Rg=10K
O
Y
GR
BL