H3192 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H3192
NPN transistor for high frequency amplifier applications and HF, VHF
band amplifier applications
ABSOLUTE MAXIMUM RATINGS T_a=25
TO-92
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current
I_B Base Current
-55~150
150
625mW
35V
30V
4V
50mA
50mA
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
GTP
fT
Cob
Characteristics
Min Typ
Collector Cut-off Current
Emitter-Base Cutoff Current
DC Current Gain
40
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Power- Gain
Current Gain-Bandwidth Product
Output Capacitance
27 29
100
1.4 2.0
hFE Classification
Max Unit
Test Conditions
0.1 nA
V_CB=35V, I_E=0
1.0 A
V_EB=4V, I_C=0
240
V_CE=12V, I_C=2mA
0.4 V
I_C=10mA, I_B=1mA
1.0 V
I_C=10mA, I_B=1mA
33 dB V_CE=6V, I_C=1mA
400 MHz V_CE=10V, I_C=1mA
3.2 pF V_CB=10V, I_E=0 f=1MHz
R
40 80
O
70 140
Y
120 240