H2N7000 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
H2N7000
N-Channel Enhancement Mode Field Effect Transistor
General Description
These products have been designed to minimize on-state resistance While
provide rugged, reliable, and fast switching performance. These products
are particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers, and other
switching applications.
Features
High density cell design for low Rds(on).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
Maximum Ratings Ta=25 unless otherwise specified
TO-92
1- S 2-G 3-D
T_stg Storage Temperature ------------------------------------------------------ -55~150
T_j
Operating Junction Temperature ---------------------------------------------- -55~150
V_DSS
Drain-Source Voltage ---------------------------------------------------------- 60V
V_DGR
Drain-Gate Voltage (R_GS 1M ) --------------------------------------------------------- 60V
V_GSS
Gate-Source Voltage ------------------------------------------------------------------------ ±20V
I_D
Drain Current (Continuous) ---------------------------------------------------------------- 200mA
P_D
Maximum Power Dissipation ----------------------------------------------------------- 400mW
Electrical Characteristics Ta=25 unless otherwise specified
Symbol
BV_DSS
I_DSS
I_GSS
V_GS(TH)
R_DS(ON)
V_DS(ON)
I_{D (ON)}
g_FS
Ciss
Coss
Crss
ton
toff
Items
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate – Body Leakage, Forward
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source On-Voltage
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Time
Turn - Off Time
Min.
60
0.8
75
Typ. Max. Unit
Conditions
V V_GS=0V, I_D=10µA
1
µA V_DS =48V, V_GS=0V
±10 nA V_GS= ±15V , V_DS =0V
3.0 V V_DS = V_GS , ID=1mA
5
Ω V_GS=10V, ID=500mA
5.3 Ω V_GS=4.5V, ID=75mA
2.5 V V_GS=10V, ID=500mA
0.4 V V_GS=4.5V, ID=75mA
mA V_GS=4.5V, V_DS =10V
320
mS V_DS=10V, ID=200mA
20
50 pF
V_DS = 25 V, V_GS = 0 V,
11 25 pF _{f = 1.0 MHz}
4 5 pF
10 nS V_DD = 15 V, R_L = 25 Ω,I_D = 500
10
nS ^{m A,VGS = 10 V, RGEN = 25 Ω}