H2907A Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H2907A
APPLICATIONS
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
TO-92
T_j Junction Temperature
150
P_C Collector Dissipation
625mW
V_CBO
V_CEO
V_{E B O}
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
- 60 V
- 60 V
-5V
1 Emitter E
2 Base B
3 Collector C
I_C Collector Current
-600 m A
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO Collector Cut-off Current
HFE(1) DC Current Gain
HFE(2)
HFE(3)
VCE(sat1) Collector- Emitter Saturation Voltage
VCE(sat 2)
VBE(sat1) Base-Emitter Saturation Voltage
VBE(sat 2)
fT
Current Gain-Bandwidth Product
Cob Output Capacitance
tON Turn-On Time
tD
Delay Time
tR
Rise Time
tOFF Turn-Off Time
tSTG Storage Time
tF
Fall Time
I_C=-10 A, I_E=0
I_C=-10mA, I_B=0
I_E=-10 A I_C=0
V_CB=-50V, I_E=0
V_CE=-10V, I_C=-0.1mA
V_CE=-10V, I_C=-150mA
V_CE=-10V, I_C=-500mA
I_C=-150mA, I_B=-15mA
I_C=-500mA, I_B=-50mA
I_C=-150mA, I_B=-15mA
I_C=-500mA, I_B=-50mA
V_CE=-20V,I_C=-50mA f=100
V_CB=-10V, I_E=0 f=1
Vcc=-30V
Ic=-150mA
IB1=-15mA
Vcc=-6V
Ic=-150mA
IB1=IB2=-15mA