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H2717 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H2717
â APPLICATIONS
TV FINAL PICTURE IF AMPLIFIER APPLICATIONS.
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -55~150â
TjââJuncttion Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦150â
PCââCollector Dissipationâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦300mW
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦30V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦25V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦4V
ICââCollector Currentâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦50mA
IeââEmitter Currentâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-50mA
TO-92
1âBaseï¼B
2âEmitterï¼E
3âCollectorï¼C
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Characteristics
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter- Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
HFE
DC Current Gain
VCE(satï¼ Collector- Emitter Saturation Voltage
VBE(sat) Base- Emitter Saturation Voltage
Cob
Output Capacacitance
fT
Current Gain-Bandwidth Product
Gpe
Power Gainï¼Figï¼
Min Typ Max Unit
Test Conditions
30
V IC=100μAï¼IE=0
25
V IC=10mAï¼IB=0
4
V IE=100μAï¼IC=0
0.1 μA VCB=30V, IE=0
0.1 μA VEB=3V, IC=0
40
240
VCE=12.5V, IC=12.5mA
0.2 V IC=15mA, IB=1.5mA
1.5 V IC=15mA,IB=1.5mA
0.8
2.0 pF VCB=10V,IE=0ï¼f=30MHz
300
MHz VCE=12.5V, IC=12.5mA
28
36
dB Vcc=12.5V, IE=-12.5mA,
f=45MHz
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