H2682 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
█ APPLICATIONS
. Audio Power Amplifie.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 8W
P_C——Collector Dissipation（T_A=25℃）…………………… 1.2W
V_CBO——Collector-Base Voltage………………………… 180V
V_CEO——Collector-Emitter Voltage……………………… 180V
V_EBO——Emitter-Base Voltage……………………………… 5V
I_C——Collector Current……………………………………100mA
NPN S I L I C O N T R A N S I S T O R
H2682
TO-126ML
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage 180
V I_C=100μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage 180
V I_C=1mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
5
V I_E=10μA，I_C=0
ICBO Collector Cut-off Current
1 μA V_CB=180V, I_E=0
IEBO Emitter Cut-off Current
1 μA V_EB=3V, I_C=0
HFE（1） DC Current Gain
90 190
V_CE=5V, I_C=1mA
HFE（2） DC Current Gain
100
320
V_CE=5V, I_C=10mA
VCE(sat) Collector- Emitter Saturation Voltage
0.12 0.5 V I_C=50mA, I_B=5mA
VBE(sat) Base-Emitter Saturation Voltage
0.8 1.5 V I_C=50mA, I_B=5mA
ft Current Gain-Bandwidth Product
200
MHz V_CE=10V, I_C=20mA,
Cob Output Capacitance
3.2 5.0 pF V_CB=10V, I_E=0,f=1MHz
█ hFE Classification
O
100—200
Y
160—320