H2655S Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NP N S I L I C O N T R A N S I S T O R
H2655S
█ APPLICATIONS
power amplifier Applications, power Switching Applications.
█ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………750mW
V_CBO——Collector-Base Voltage………………………………50V
V_CEO——Collector-Emitter Voltage……………………………50V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current……………………………………………2A
Ib——Base Current………………………………………………-0.5A
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
fT
Cob
tON
tSTG
tF
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
50
V I_C=100μA, I_E=0
Collector-Emitter Breakdown Voltage
50
V I_C=10mA, I_B=0
Emitter-Base Breakdown Voltage
5
V I_E=100μA，I_C=0
Collector Cut-off Current
1.0 μA V_CB=50V, I_E=0
Emitter Cut-off Current
1.0 μA V_EB=5V, I_C=0
DC Current Gain
70
240
V_CE=2V, I_C=0.5A
40
V_CE=2V, I_C=1.5A
Collector- Emitter Saturation Voltage
0.5 V I_C=1A, I_B=50mA
Base-Emitter Saturation Voltage
1.2 V I_C=1A, I_B=50mA
Current Gain-Bandwidth Product
Output Capacitance
Turn-on Time
100
MHz V_CE=2V, I_C=0.5A
30
pF V_CB=10V, I_E=0，f=1MHz
0.1
μS
Storage Time
1.0
μS See specified test circuit
Fall Time
0.1
μS
█ hFE Classification
O
Y
70—140
120—240