H237 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H237
APPLICATIONS
SWITCHING AND AMPLIFIER .
ABSOLUTE MAXIMUM RATINGS T_a=25
Tstg— — Storage Temperature
-55 ~1 50
Tj— — Junction Temperature
15 0
PC— — Collector Dissipation
500mW
VCBO— — Collector-Base Voltage
50V
VCEO— — Collector-Emitter Voltage
45V
VEBO— — Emitter-Base Voltage
6V
IC— — Collector Current
100mA
TO-92
1? Collector C
2? Base B
3? Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
HFE DC Current Gain
VCE(sat1) Collector- Emitter Saturation Voltage
VCE(sat2) Collector- Emitter Saturation Voltage
VBE(sat1) Base-Emitter Saturation Voltage
VBE(sat2) Base-Emitter Saturation Voltage
VBE(ON) Base-Emitter On Voltage
ICES Collector Cut-off Current
ft 1
Current Gain-Bandwidth Product
ft 2
Current Gain-Bandwidth Product
Cob Output Capacitance
Input Capacitance
NF Noise Figure
I_C=2mA, I_B=0
I_E=1 A I_C=0
V_CE=5V, I_C=2mA
I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
I_C=10mA, I_B=0.5mA
I_C=100mA, I_B=5mA
V_CE=5V, I_C=2mA
V_CE=50V, V_BE =0
V_CE=3V, I_C=0.5mA, f=100MHz
V_CE=5V, I_C=10mA, f=100MHz
V_CB=10V, I_E=0 f=1MHz
V_CE=5V, I_C=0.2mA
f=1KHz RG=2K
hFE Classification
A
B
GR