H2369 Datasheet, PDF(1/1 Page) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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H2369 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.

NPN S I L I C O N T R A N S I S T O R

H2369

APPLICATIONS

This device is designed for high speed saturated

switching at collector currents of mA to 100mA

ABSOLUTE MAXIMUM RATINGS Ta=25

Tstg Storage Temperature

-55~150

Tj Junction Temperature

150

PC Collector Dissipation

625mW

VCBO Collector-Base Voltage

40V

VCEO Collector-Emitter Voltage

15V

VEBO Emitter- Base Voltage

4 . 5V

IC Collector Current

2 00 m A

TO-92

1 Collector C

2 Base B

3 Emitter E

ELECTRICAL CHARACTERISTICS Ta=25

Symbol

Characteristics

Min Typ Max Unit

Test Conditions

BVCBO

BVCEO

BVEBO

HFE(1)

HFE(2)

VCE(sat)

VBE(sat)

ICBO

IEBO

Cob

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

Collector- Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cut-off Current

Emitter Cut-off Current

Output Capacitance

IC=10 A, IE=0

IC=10mA, IB=0

IE=10 A IC=0

VCE=1V, IC=10mA

VCE=2, IC=100mA

IC=10mA, IB=1mA

VCB=25V, IE=0

VEB=4.5V, IC=0

VCB=5V, IE=0 f=1