 English |
|
|
|
|
|
|
|
| H2328S Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
| |||
|
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H2328S
AUDIO POWER AMPLFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current
-55~150
150
750mW
30V
30V
5V
2A
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
VBE(ON)
fT
Cob
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
30
V
IC=100 A, IE=0
Collector-Emitter Breakdown Voltage
30
V
IC=10mA, IB=0
Emitter-Base Breakdown Voltage
5
V
IE=1mA IC=0
Collector Cut-off Current
100 nA
VCB=30V, IE=0
Emitter-Base Cut-off Current
100 nA
VEB=5V, IC=0
DC Current Gain
100
320
VCE=2V, IC=500mA
Collector- Emitter Saturation Voltage
2
V
IC=1.5mA, IB=30mA
Base-Emitter On Voltage
1V
VCE=2V, IC=500mA
Current Gain-Bandwidth Product
120
MHz VCE=2V, IC=500mA
Collector-Base Capacitance
30
pF VCB=10V, IE=0 F=1MHz
hFE Classification
O
100 200
Y
160 320
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese