H2274 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H2274
█ APPLICATIONS
Low frequency power amplifier Applications.
█ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………600mW
V_CBO——Collector-Base Voltage………………………………60V
V_CEO——Collector-Emitter Voltage……………………………50V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current………………………………………500mA
I_CP——Collector Curren（t Pulse）………………………………800mA
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
60
V I_C=10μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
50
V I_C=1mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
5
V I_E=10μA，I_C=0
ICBO Collector Cut-off Current
1.0 μA V_CB=40V, I_E=0
IEBO Emitter Cut-off Current
1.0 μA V_EB=4V, I_C=0
HFE(1) DC Current Gain
60
320
V_CE=5V, I_C=50mA
HFE(2)
35
V_CE=5V, I_C=400mA
VCE(sat) Collector- Emitter Saturation Voltage
0.2 0.6 V I_C=400mA, I_B=40mA
VBE(sat) Base-Emitter Saturation Voltage
0.9 1.2 V I_C=400mA, I_B=40mA
fT
Current Gain-Bandwidth Product
120
MHz V_CE=10V, I_C=10mA
Cob Output Capacitance
5
pF V_CB=10V, f=1MHz
█ hFE Classification
D
E
F
60—120
120—200
160—320