H227 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H227
█ APPLICATIONS
Low frequency power amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………400mW
V_CBO——Collector-Base Voltage………………………………30V
V_CEO——Collector-Emitter Voltage……………………………25V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current……………………………………300mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
30
V I_C=100μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
25
V I_C=10mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
5
V I_E=10μA，I_C=0
HFE DC Current Gain
70
400
V_CE=1V, I_C=50mA
VCE(sat) Collector- Emitter Saturation Voltage
0.14 0.4 V I_C=300mA, I_B=30mA
ICBO Collector Cut-off Current
100 nA V_CB=25V, I_E=0
IEBO Emitter Cut-off Current
100 nA V_EB=3V, I_C=0
█ hFE Classification
O
70—140
Y
120—240
G
200—400