H2216 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H2216
█ APPLICATIONS
TV FINAL PICTURE IF AMPLIFIER APPLICATIONS.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Juncttion Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………300mW
V_CBO——Collector-Base Voltage………………………………50V
V_CEO——Collector-Emitter Voltage……………………………45V
V_EBO——Emitter-Base Voltage………………………………4V
I_C——Collector Current…………………………………………50mA
Ie——Emitter Current…………………………………………-50mA
TO-92
1―Base，B
2―Emitter，E
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter- Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
HFE
DC Current Gain
VCE(sat） Collector- Emitter Saturation Voltage
VBE(sat) Base- Emitter Saturation Voltage
Cob
Output Capacacitance
fT
Current Gain-Bandwidth Product
Gpe
Power Gain（Fig）
Min Typ Max Unit
Test Conditions
50
V IC=100μA，IE=0
45
V IC=10mA，IB=0
4
V IE=100μA，IC=0
0.1 μA VCB=30V, IE=0
0.1 μA VEB=3V, IC=0
40
140
VCE=12.5V, IC=12.5mA
0.2 V IC=15mA, IB=1.5mA
1.5 V IC=15mA,IB=1.5mA
0.8
2.0 pF VCB=10V,IE=0，f=30MHz
300
MHz VCE=12.5V, IC=12.5mA
29
36
dB ^{Vcc=12.5V, IE=-12.5mA,}
f=45MHz