H1959 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN EPITAXIAL SILICON TRANSISTOR
NPN S I L I C O N T R A N S I S T O R
H1959
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Juncttion Temperature
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter - Base Voltage
I_C Collector Current
I_B
Base Current
-55~150
150
500mW
35V
30V
5V
500mA
100mA
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
ICBO
IEBO
HFE
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VBE
VCE(sat)
fT
Cob
Base- Emitter Voltage
Collector- Emitter Saturation Voltage
Transition frequency
Collector Output capacitance
Min Typ Max
0.1
0.1
70
400
25
0.8 1
0.1 0.25
300
7
Unit
Test Conditions
VCB=35V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=6V, IC=400mA
VCE=1V, IC=100mA
IC=100mA, IB=10mA
VCE=6V, IC=20mA
VCB=6V, IE=0,
f=1MHZ
hFE Classification
70 140
120 240
200 400
25 Min
40 Min