|
H1836 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
|
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H1836
â FOR HIGH VOLTAGE AMPLIFIER APPLICATIONS
PLASMA DISPLAYï¼NIXIE TUBE DRIVER APPLICATIONS.
COLOR TV VIDEO OUTPUT APPLICATIONS.
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -55~150â
TjââJunction Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦150â
PCââCollector Dissipationâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦625mW
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦300V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦300V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦6V
ICâICââCâolCleocltolercCtourrreCnutâ¦rreâ¦ntâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦30â¦0mâ¦A100mA
TO-92
1âEmitterï¼E
2âBaseï¼B
3âCollectorï¼C
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
300
V IC=100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage
300
V IC=1mA, IB=0
ICBO Collector Cut-off Current
0.1 μA VCB=300V, IE=0
IEBO Emitter Cut-off Current
0.1 μA VEB=6V, IC=0
HFEï¼1ï¼ DC Current Gain
20
VCE=10V, IC=1mA
HFEï¼1ï¼
30
150
VCE=10V, IC=20mA
VCE(sat) Collector- Emitter Saturation Voltage
0.5 V IC=20mA, IB=2mA
VBE(sat) Base-Emitter Saturation Voltage
1.2 V IC=20mA, IB=2mA
fT
Current Gain-Bandwidth Product
50 80
MHz VCE=10V, IC=20mA
Cob Output Capacitance
3
4 pF VCB=20V, IE=0ï¼f=1MHz
|