English
Language : 

H1836 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H1836
█ FOR HIGH VOLTAGE AMPLIFIER APPLICATIONS
PLASMA DISPLAY,NIXIE TUBE DRIVER APPLICATIONS.
COLOR TV VIDEO OUTPUT APPLICATIONS.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………300V
VCEO——Collector-Emitter Voltage……………………………300V
VEBO——Emitter-Base Voltage………………………………6V
IC—IC——C—olCleocltolercCtourrreCnut…rre…nt………………………………………………………………30…0m…A100mA
TO-92
1―Emitter,E
2―Base,B
3―Collector,C
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
300
V IC=100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage
300
V IC=1mA, IB=0
ICBO Collector Cut-off Current
0.1 μA VCB=300V, IE=0
IEBO Emitter Cut-off Current
0.1 μA VEB=6V, IC=0
HFE(1) DC Current Gain
20
VCE=10V, IC=1mA
HFE(1)
30
150
VCE=10V, IC=20mA
VCE(sat) Collector- Emitter Saturation Voltage
0.5 V IC=20mA, IB=2mA
VBE(sat) Base-Emitter Saturation Voltage
1.2 V IC=20mA, IB=2mA
fT
Current Gain-Bandwidth Product
50 80
MHz VCE=10V, IC=20mA
Cob Output Capacitance
3
4 pF VCB=20V, IE=0,f=1MHz