 English |
|
|
|
|
|
|
|
| H1815 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
| |||
|
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H1815
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC
ABSOLUTE MAXIMUM RATINGS Ta=25
TO-92
Tstg Storage Temperature
Tj Junction Temperature
-55~150
150
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
400mW
60V
50V
1 Emitter E
2 Collector C
3 Base B
VEBO Emitter-Base Voltage
5V
IC Collector Current
150mA
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
BVCBO
BVCEO
BVEBO
fT
Characteristics
Min Typ Max Unit
Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
70
25
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
60
Collector-Emitter Breakdown Voltage
50
Emitter-Base Breakdown Voltage
5
Current Gain-Bandwidth Product
80
100 nA
VCB=60V, IE=0
100 nA
VEB=5V, IC=0
700
VCE=6V, IC=2mA
VCE=6V, IC=150mA
250 mV IC=100mA, IB=10mA
1.0 V IC=100mA, IB=10mA
V IC=100 A, IE=0
V IC=1mA, IB=0
V
IE=100 A IC=0
MHz VCE=10V, IC=1mA
hFE Classification
O
70 140
Y
120 240
GR
200 400
BL
350 700
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese