H1740 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H1740
APPLICATIONS
Medium Seed switching
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
30 0mW
V_CBO Collector-Base Voltage
50V
V_CEO Collector-Emitter Voltage
40V
V_EBO Emitter - Base Voltage
5V
I_C Collector Current
1 00 m A
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
HFE
DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
BVCBO Collector-Base Breakdown Voltage
BVCEO
BVEBO
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
fT
Current Gain-Bandwidth Product
Cob
Output Capacitance
Max Unit
Test Conditions
V_CB=30V, I_E=0
V_EB=4V, I_C=0
V_CE=1V, I_C=1mA
I_C=50mA, I_B=5mA
I_C=50 A, I_E=0
I_C=1mA, I_B=0
I_E=50 A I_C=0
V_CE=12V, I_C=2mA
V_CB=6V, I_E=0 f=1MHz
hFE Classification
Q
R
S
E