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H1684 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
█ APPLICATIONS
Medium frequency power amplifier,Medium Seed switching.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 10W
PC——Collector Dissipation(TA=25℃)…………………… 1.5W
VCBO——Collector-Base Voltage………………………… 120V
VCEO——Collector-Emitter Voltage……………………… 100V
VEBO——Emitter-Base Voltage……………………………… 6V
IC——Collector Current……………………………………1.5A
NPN S I L I C O N T R A N S I S T O R
H1684
TO-126ML
1―Emitter,E
2―Collector,C
3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage 120
BVCEO Collector-Emitter Breakdown Voltage 100
V IC=10μA, IE=0
V IC=1mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
6
V IE=10μA,IC=0
ICBO Collector Cut-off Current
100 nA VCB=100V, IE=0
IEBO Emitter Cut-off Current
100 nA VEB=4V, IC=0
HFE(1) DC Current Gain
100
400
VCE=5V, IC=100mA
HFE(2) DC Current Gain
30
VCE=5V, IC=1A
VCE(sat) Collector- Emitter Saturation Voltage
0.1 0.3 V IC=500mA, IB=50mA
VBE(sat) Base-Emitter Saturation Voltage
0.85 1.2 V IC=500mA, IB=50mA
tON Turn-On Time
80
nS
tSTG Storage Time
1000
nS
See specified test circuit
tF Fall Time
50
nS
ft Current Gain-Bandwidth Product
120
MHz VCE=10V, IC=50mA,
Cob Output Capacitance
11
pF VCB=10V, IE=0,f=1MHz
█ hFE Classification
R
100—200
S
140—280
T
200—400