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H1684 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
â APPLICATIONS
Medium frequency power amplifierï¼Medium Seed switching.
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -55~150â
TjââJunction Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 150â
PCââCollector Dissipationï¼Tc=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦ 10W
PCââCollector Dissipationï¼TA=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦ 1.5W
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 120V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦ 100V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 6V
ICââCollector Currentâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦1.5A
NPN S I L I C O N T R A N S I S T O R
H1684
TO-126ML
1âEmitterï¼E
2âCollectorï¼C
3âBaseï¼B
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage 120
BVCEO Collector-Emitter Breakdown Voltage 100
V IC=10μA, IE=0
V IC=1mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
6
V IE=10μAï¼IC=0
ICBO Collector Cut-off Current
100 nA VCB=100V, IE=0
IEBO Emitter Cut-off Current
100 nA VEB=4V, IC=0
HFEï¼1ï¼ DC Current Gain
100
400
VCE=5V, IC=100mA
HFEï¼2ï¼ DC Current Gain
30
VCE=5V, IC=1A
VCE(sat) Collector- Emitter Saturation Voltage
0.1 0.3 V IC=500mA, IB=50mA
VBE(sat) Base-Emitter Saturation Voltage
0.85 1.2 V IC=500mA, IB=50mA
tON Turn-On Time
80
nS
tSTG Storage Time
1000
nS
See specified test circuit
tF Fall Time
50
nS
ft Current Gain-Bandwidth Product
120
MHz VCE=10V, IC=50mA,
Cob Output Capacitance
11
pF VCB=10V, IE=0,f=1MHz
â hFE Classification
R
100â200
S
140â280
T
200â400
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