H1674 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O
H1674
█ TV PIF AMPLIFIER,FM TUNER RF AMPLIFIER,
MIXER, OSCILLATOR
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………250mW
V_CBO——Collector-Base Voltage………………………………30V
V_CEO——Collector-Emitter Voltage……………………………20V
V_EBO——Emitter-Base Voltage………………………………4V
I_C——Collector Current……………………………………20mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
ICBO
IEBO
HFE
VCE(sat)
VBE(on)
BVCBO
BVCEO
BVEBO
fT
Cob
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Current Gain-Bandwidth Product
Output Capacitance
█ hFE Classification
Min Typ Max Unit
Test Conditions
0.1 μA V_CB=30V, I_E=0
0.1 μA V_EB=4V, I_C=0
40
240
V_CE=6V, I_C=1mA
0.1 0.3 V I_C=10mA, I_B=1mA
0.72
V V_CE=6V, I_C=1mA
30
V I_C=10μA, I_E=0
20
V I_C=5mA, I_B=0
4
V I_E=10μA，I_C=0
400 600
MHz V_CE=6V, I_C=1mA
1.2
pF V_CB=6V, I_E=0，f=1MHz
R
40—80
O
70—140
Y
120—240