H1426 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PN P S I L I C O N T R A N S I S T O R
H1426
APPLICATIONS
DC-DC Convertor
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
750mW
V_CBO Collector-Base Voltage
- 20 V
V_CEO Collector-Emitter Voltage
- 20 V
V_EBO Emitter- Base Voltage
-6V
I_C ^IC
Collector Current
Collector Current
I_B Base Current
-3A
300mA
-200mA
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
fT
Current Gain-Bandwidth Product
Cob Output Capacitance
hFE Classification
Max Unit
Test Conditions
I_C=-50 A, I_E=0
I_C=-1mA, I_B=0
I_E=-10 A I_C=0
V_CB=-20V, I_E=0
V_EB=-5V, I_C=0
V_CE=-2V, I_C=-100mA
I_C=-2A, I_B=-100mA
V_CE=-2V, I_C=-500mA,
f=100
V_CB=-10V, I_E=0 f=1
P
Q
R