H1423 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PN P S I L I C O N T R A N S I S T O R
H1423
█ GENERAL PURPOSE AMPLIFIER AND LOW NOISE
AMPLIFIER APPLICATIONS
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………625mW
V_CBO——Collector-Base Voltage………………………………-40V
V_CEO——Collector-Emitter Voltage……………………………-40V
V_EBO——Emitter-Base Voltage………………………………-7V
I_C—^IC——C^—olCleocltloercCtourrreCnut…^rre…^nt………………………………………………………………3^…00^…mA-200mA
I_B——Base Current……………………………………………-200mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
BVCEO
ICBO
IEBO
HFE
VCE(sat)
VBE
fT
Cob
Characteristics
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Output Capacitance
Min Typ Max Unit
Test Conditions
-40
V I_C=-1mA, I_B=0
-50 nA V_CB=-30V, I_E=0
-100 nA V_EB=-6V, I_C=0
70
400
V_CE=-5V, I_C=-2mA
-0.22 V I_C=-50mA, I_B=-10mA
-0.65
V V_CE=-5V, I_C=-2mA
150 300
MHz V_CE=-5V, I_C=-10mA
4.5 pF V_CB=-10V, I_E=0，f=1MHz