H1420 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H1420
█ GENERAL PURPOSE AMPLIFIER AND LOW NOISE
AMPLIFIER APPLICATIONS
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………625mW
V_CBO——Collector-Base Voltage………………………………60V
V_CEO——Collector-Emitter Voltage……………………………60V
V_EBO——Emitter-Base Voltage………………………………7V
I_C—^IC——C^—olCleocltolercCtourrreCnut…^rre…^nt………………………………………………………………30^…0m^…A200mA
I_B——Base Current……………………………………………200mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage
60
V I_C=1mA, I_B=0
ICBO Collector Cut-off Current
50 nA V_CB=40V, I_E=0
IEBO Emitter Cut-off Current
100 nA V_EB=6V, I_C=0
HFE DC Current Gain
70
700
V_CE=5V, I_C=2mA
VCE(sat) Collector- Emitter Saturation Voltage
0.22 V I_C=50mA, I_B=10mA
VBE Base-Emitter Voltage
1.0 V V_CE=5V, I_C=2mA
fT
Current Gain-Bandwidth Product
150 400
MHz V_CE=5V, I_C=10mA
Cob Output Capacitance
3.5
pF V_CB=10V, I_E=0，f=1MHz