H1302 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O
H1302
█ AUDIO MUTING APPLICATION.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………400mW
V_CBO——Collector-Base Voltage………………………………25V
V_CEO——Collector-Emitter Voltage……………………………20V
V_EBO——Emitter-Base Voltage………………………………12V
I_C—^IC——C^—olCleocltolercCtourrreCnut…^rre…^nt………………………………………………………………30^…0m^…A300mA
I_B——Base Current……………………………………………30mA
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
100 nA V_CB=25V, I_E=0
IEBO Emitter Cut-off Current
100 nA V_EB=12V, I_C=0
HFE DC Current Gain
200
800
V_CE=2V, I_C=4mA
VCE(sat) Collector- Emitter Saturation Voltage
0.25 V I_C=100mA, I_B=10mA
VBE(sat) Base-Emitter Saturation Voltage
1.0 V I_C=100mA, I_B=10mA
fT
Current Gain-Bandwidth Product
60
MHz V_CE=10V, I_C=1mA
Cob Output Capacitance
10
pF V_CB=10V, I_E=0，f=1MHz
█ hFE Classification
A
200—350
B
300—500
C
400—800