H13003 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H13003
HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching. Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-65~150
T_j Junction Temperature
150
P_C Collector Dissipation
40W
V_CBO Collector-Base Voltage
700V
V_CEO Collector-Emitter Voltage
400V
V_EBO Emitter-Base Voltage
9V
I _CCollector Current
1.5A
IB Base Curren
0.75A
1 Base B
2 Collector C
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ
BVCEO Collector-Emitter Breakdown Voltage
400
IEBO Emitter-Base Cut-off Current
HFE1 DC Current Gain
10
HFE2 DC Current Gain
5
VCE(sat)1 Collector- Emitter Saturation Voltage
VCE(sat)2 Collector- Emitter Saturation Voltage
VCE(sat)3 Collector- Emitter Saturation Voltage
VBE(sat)1 Base-Emitter Saturation Voltage
VBE(sat)2 Base-Emitter Saturation Voltage
fT
Current Gain-Bandwidth Product
4
tON Turn On Time
tSTG Storage Time
tF
Fall Time
hFE Classification
H1
H2
H3
Max Unit
Test Conditions
V I_C=5mA, IB=0
10
A V_EB=9V, I_C=0
40
V_CE=5V, I_C=0.5A
V_CE=2V, I_C=1A
0.5 V I_C=0.5A, I_B=0.1A
1 V I_C=1A, I_B=0.25A
3 V I_C=1.5A, I_B=0.5A
1 V I_C=0.5A, IB=0.1A
1.2 V I_C=1A, IB=0.25A
MHz VCE=10V,IC=0.1A
1.1 ^s
V_CC=125V, I_C=1A,
4.0
s I_B1=0.2A,I_B2=-0.2A
0.7 s RL=125
H4
H5
10-16
14-21
19-26
24-31
29-40