H13002U Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H13002U
High Speed Switching
Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-65~150
T_j Junction Temperature
150
P_C Collector Dissipation
10W
V_CBO Collector-Base Voltage
600V
V_CEO Collector-Emitter Voltage
400V
V_EBO Emitter - Base Voltage
9V
I_C Collector Current
1.5A
ELECTRICAL CHARACTERISTICS T_a=25
TO-251
1 Base B
Collector C
Emitter E
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
HFE
VCE(sat)1
VCE(sat)2
VBE(sat)
ICBO
IEBO
fT
tON
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
Current Gain-Bandwidth Product
Turn On Time
I_C=1mA, IE=0
I_C=10mA, IB=0
I_E=1mA I_C=0
V_CE=10V, I_C=0.1A
I_C=1A, I_B=500mA
I_C=0.5A, I_B=100mA
I_C=0.5A, IB=100mA
V_CB=500V, I_E=0
V_EB=9V, I_C=0
V_CE=10V,I_C=0.1A,f=1MHz
s ^VCC^{=125V, I}C^=1A,
tSTG
Storage Time
tF
Fall Time
s IB1=0.2A,IB2=-0.2A
s RL=125
hFE Classification
H1
H2
H3
H4
H5