H13001 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H13001
HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current
-55~150
150
10W
600V
400V
9V
0.25A
1 Base B
2 Collector C
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
fT
Characteristics
Min Typ
Collector-Base Breakdown Voltage
600
Collector-Emitter Breakdown Voltage
400
Emitter-Base Breakdown Voltage
9
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
10
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
8
Max Unit
Test Conditions
V I_C=1mA, IE=0
V I_C=10mA, IB=0
V I_E=1mA I_C=0
100
A V_CB=500V, I_E=0
100
A V_EB=9V, I_C=0
40
V_CE=10V, I_C=20mA
0.6 V I_C=100mA, I_B=20mA
1.2 V I_C=100mA, IB=20mA
MHz V_CE=10V, I_C=20mA
hFE Classification
H1
10-16
H2
14-21
H3
19-26
H4
24-31
H5
29-40