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H1270 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H1270
█ CENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………500mW
VCBO——Collector-Base Voltage………………………………-35V
VCEO——Collector-Emitter Voltage……………………………-30V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-500mA
TO-92
1―Emitter,E
2―Collector,C
3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
-100 nA VCB=-35V, IE=0
IEBO Emitter Cut-off Current
-100 nA VEB=-5V, IC=0
HFE(1) DC Current Gain
70
240
VCE=-1V, IC=-100mA
HFE(2)
25
VCE=-6V, IC=-400mA
VCE(sat) Collector- Emitter Saturation Voltage
-0.1 -0.25 V IC=-100mA, IB=-10mA
VBE Base-Emitter Voltage
-0.8 -1.0 V IC=-1A, IB=-100mA
fT
Current Gain-Bandwidth Product
200
MHz VCE=-6V, IC=-20mA
Cob Output Capacitance
13
pF VCB=-6V, IE=0,f=1MHz
█ hFE Classification
O
70—140
Y
120—240