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H1270 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H1270
â CENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -55~150â
TjââJunction Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦150â
PCââCollector Dissipationâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦500mW
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-35V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-30V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-5V
ICââCollector Currentâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-500mA
TO-92
1âEmitterï¼E
2âCollectorï¼C
3âBaseï¼B
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
-100 nA VCB=-35V, IE=0
IEBO Emitter Cut-off Current
-100 nA VEB=-5V, IC=0
HFEï¼1ï¼ DC Current Gain
70
240
VCE=-1V, IC=-100mA
HFEï¼2ï¼
25
VCE=-6V, IC=-400mA
VCE(sat) Collector- Emitter Saturation Voltage
-0.1 -0.25 V IC=-100mA, IB=-10mA
VBE Base-Emitter Voltage
-0.8 -1.0 V IC=-1A, IB=-100mA
fT
Current Gain-Bandwidth Product
200
MHz VCE=-6V, IC=-20mA
Cob Output Capacitance
13
pF VCB=-6V, IE=0ï¼f=1MHz
â hFE Classification
O
70â140
Y
120â240
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