H1268 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H1268
█ LOW NOISE AMPLIFIER APPLICATION.
HIGH VOLTAGE APPLICATION
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………300mW
V_CBO——Collector-Base Voltage………………………………-120V
V_CEO——Collector-Emitter Voltage……………………………-120V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current……………………………………-100mA
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
BVCEO
ICBO
IEBO
HFE
VCE(sat)
VBE
fT
Cob
Characteristics
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Output Capacitance
NF Noise Figure
█ hFE Classification
Min Typ Max Unit
Test Conditions
-120
V I_C=-1mA, I_B=0
-100 nA V_CB=-120V, I_E=0
-100 nA V_EB=-5V, I_C=0
200
700
V_CE=-6V, I_C=-2mA
-0.3 V I_C=-10mA, I_B=-1mA
-0.65
V I_C=-6A, I_B=-2mA
100
MHz V_CE=-6V, I_C=-1mA
4.0
pF V_CB=-10V, I_E=0，f=1MHz
6
V_CE=-6V, I_C=-100μA，
f=10Hz，Rg=10KΩ
2
dB
V_CE=-6V, I_C=-100μA，
f=1Hz，Rg=10KΩ
3
V_CE=-6V, I_C=-100μA，
f=1Hz，Rg=100KΩ
GR
200—400
BL
350—700