H1266 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H1266
█ APPLICATIONS
General Purpose Application.
Switching Application.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………400mW
V_CBO——Collector-Base Voltage………………………………-50V
V_CEO——Collector-Emitter Voltage……………………………-50V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current………………………………………-150mA
Ib——Base Current……………………………………………-50mA
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
-50
V I_C=-100μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
-50
V I_C=-1mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
-5
V I_E=-10μA，I_C=0
HFE（1） DC Current Gain
70
400
V_CE=-6V, I_C=-2mA
HFE（2） DC Current Gain
25
V_CE=-6V, I_C=-150mA
VCE(sat) Collector- Emitter Saturation Voltage
-0.1 -0.3 V I_C=-100mA, I_B=-10mA
VBE(sat) Base-Emitter Saturation Voltage
-1.1 V I_C=-100mA, I_B=-10mA
ICBO Collector Cut-off Current
-100 nA V_CB=-50V, I_E=0
IEBO Emitter Cut-off Current
-100 nA V_EB=-5V, I_C=0
fT
Current Gain-Bandwidth Product
80
MHz V_CE=-10V, I_C=-10mA
Cob Output Capacitance
4
7 pF V_CB=-50V, I_E=0，f=1MHz
█ hFE Classification
O
70—140
Y
120—240
GR
200—400