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H1246 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O
H1246
█ POWER SUPPLIES,RELAY DRIVERS,
LAMP DRIVERS,ELECTRICAL EQUIPMENT
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………750mW
VCBO——Collector-Base Voltage………………………………30V
VCEO——Collector-Emitter Voltage……………………………25V
VEBO——Emitter-Base Voltage………………………………6V
IC——Collector Current……………………………………2A
TO-92
1―Emitter,E
2―Collector,C
3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
HFE(1) DC Current Gain
HFE(2)
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
fT
Current Gain-Bandwidth Product
Cob Output Capacitance
* pulse
█ hFE Classification
Min Typ Max Unit
Test Conditions
30
V IC=10μA, IE=0
25
V IC=1mA, IB=0
6
V IE=10μA,IC=0
100
560
VCE=2V, IC=100mA
65 130
VCE=2V, IC=1.5A *
0.18 0.4 V IC=1.5A, IB=75mA *
0.85 1.2 V IC=1.5A, IB=75mA *
100 nA VCB=20V, IE=0
100 nA VEB=4V, IC=0
150
MHz VCE=10V, IC=50mA
19
pF VCB=10V, IE=0,f=1MHz
R
100—200
S
140—280
T
200—400
U
280—560