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H1246 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O
H1246
â POWER SUPPLIESï¼RELAY DRIVERSï¼
LAMP DRIVERSï¼ELECTRICAL EQUIPMENT
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -55~150â
TjââJunction Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦150â
PCââCollector Dissipationâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦750mW
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦30V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦25V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦6V
ICââCollector Currentâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦2A
TO-92
1âEmitterï¼E
2âCollectorï¼C
3âBaseï¼B
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Characteristics
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
HFE(1) DC Current Gain
HFE(2)
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
fT
Current Gain-Bandwidth Product
Cob Output Capacitance
* pulse
â hFE Classification
Min Typ Max Unit
Test Conditions
30
V IC=10μA, IE=0
25
V IC=1mA, IB=0
6
V IE=10μAï¼IC=0
100
560
VCE=2V, IC=100mA
65 130
VCE=2V, IC=1.5A *
0.18 0.4 V IC=1.5A, IB=75mA *
0.85 1.2 V IC=1.5A, IB=75mA *
100 nA VCB=20V, IE=0
100 nA VEB=4V, IC=0
150
MHz VCE=10V, IC=50mA
19
pF VCB=10V, IE=0ï¼f=1MHz
R
100â200
S
140â280
T
200â400
U
280â560
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