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H1144 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
█ APPLICATIONS
Medium frequency power amplifier,Medium Seed switching.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 10W
PC——Collector Dissipation(TA=25℃)…………………… 1.5W
VCBO——Collector-Base Voltage………………………… -120V
VCEO——Collector-Emitter Voltage……………………… -100V
VEBO——Emitter-Base Voltage……………………………… -6V
IC——Collector Current……………………………………-1.5A
PN P S I L I C O N T R A N S I S T O R
H1144
TO-126ML
1―Emitter,E
2―Collector,C
3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage -120
BVCEO Collector-Emitter Breakdown Voltage -100
V IC=-10μA, IE=0
V IC=-1mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
-6
V IE=-10μA,IC=0
ICBO Collector Cut-off Current
-100 nA VCB=-100V, IE=0
IEBO Emitter Cut-off Current
-100 nA VEB=-4V, IC=0
HFE(1) DC Current Gain
100
400
VCE=-5V, IC=-100mA
HFE(2) DC Current Gain
30
VCE=-5V, IC=-1A
VCE(sat) Collector- Emitter Saturation Voltage
0.18 0.5 V IC=-500mA, IB=-50mA
VBE(sat) Base-Emitter Saturation Voltage
0.85 1.2 V IC=-500mA, IB=-50mA
tON Turn-On Time
80
nS
tSTG Storage Time
750
nS See specified test circuit
tF Fall Time
40
nS
ft Current Gain-Bandwidth Product
100
MHz VCE=-10V, IC=-50mA,
Cob Output Capacitance
18
pF VCB=-10V, IE=0,f=1MHz
█ hFE Classification
R
100—200
S
140—280
T
200—400