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H1144 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
â APPLICATIONS
Medium frequency power amplifierï¼Medium Seed switching.
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -55~150â
TjââJunction Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 150â
PCââCollector Dissipationï¼Tc=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦ 10W
PCââCollector Dissipationï¼TA=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦ 1.5W
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -120V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦ -100V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -6V
ICââCollector Currentâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦-1.5A
PN P S I L I C O N T R A N S I S T O R
H1144
TO-126ML
1âEmitterï¼E
2âCollectorï¼C
3âBaseï¼B
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage -120
BVCEO Collector-Emitter Breakdown Voltage -100
V IC=-10μA, IE=0
V IC=-1mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
-6
V IE=-10μAï¼IC=0
ICBO Collector Cut-off Current
-100 nA VCB=-100V, IE=0
IEBO Emitter Cut-off Current
-100 nA VEB=-4V, IC=0
HFEï¼1ï¼ DC Current Gain
100
400
VCE=-5V, IC=-100mA
HFEï¼2ï¼ DC Current Gain
30
VCE=-5V, IC=-1A
VCE(sat) Collector- Emitter Saturation Voltage
0.18 0.5 V IC=-500mA, IB=-50mA
VBE(sat) Base-Emitter Saturation Voltage
0.85 1.2 V IC=-500mA, IB=-50mA
tON Turn-On Time
80
nS
tSTG Storage Time
750
nS See specified test circuit
tF Fall Time
40
nS
ft Current Gain-Bandwidth Product
100
MHz VCE=-10V, IC=-50mA,
Cob Output Capacitance
18
pF VCB=-10V, IE=0,f=1MHz
â hFE Classification
R
100â200
S
140â280
T
200â400
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