H1020S Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
P NP S I L I C O N T R A N S I S T O R
H1020S
█ APPLICATIONS
power amplifier Applications,
power Switching Applications.
█ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………750mW
V_CBO——Collector-Base Voltage………………………………-50V
V_CEO——Collector-Emitter Voltage……………………………-50V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current……………………………………-2A
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
fT
Cob
tON
tSTG
tF
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
-50
V I_C=-100μA, I_E=0
Collector-Emitter Breakdown Voltage
-50
V I_C=-10mA, I_B=0
Emitter-Base Breakdown Voltage
-5
V I_E=-100μA，I_C=0
Collector Cut-off Current
-1.0 μA V_CB=-50V, I_E=0
Emitter Cut-off Current
-1.0 μA V_EB=-5V, I_C=0
DC Current Gain
70
240
V_CE=-2V, I_C=-0.5A
40
V_CE=-2V, I_C=-1.5A
Collector- Emitter Saturation Voltage
-0.5 V I_C=-1A, I_B=-50mA
Base-Emitter Saturation Voltage
-1.2 V I_C=-1A, I_B=-50mA
Current Gain-Bandwidth Product
100
MHz V_CE=-2V, I_C=-0.5A
Output Capacitance
40
pF V_CB=-10V, I_E=0，f=1MHz
Turn-on Time
0.1
μS
Storage Time
1.0
μS See specified test circuit
Fall Time
0.1
μS
█ hFE Classification
O
70—140
Y
120—240