H1015 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
P NP S I L I C O N T R A N S I S T O R
H1015
█ AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
TO-92
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………400mW
V_CBO——Collector-Base Voltage………………………………-50V
V_CEO——Collector-Emitter Voltage……………………………-50V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current……………………………………-150mA
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
1―Emitter，E
2―Collector，C
3―Base，B
Symbol
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
BVCBO
BVCEO
BVEBO
fT
Characteristics
Min Typ Max Unit
Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
70
25
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
-50
Collector-Emitter Breakdown Voltage
-50
Emitter-Base Breakdown Voltage
-5
Current Gain-Bandwidth Product
80
-100 nA V_CB=-50V, I_E=0
-100 nA V_EB=-5V, I_C=0
700
V_CE=-6V, I_C=-2mA
V_CE=-6V, I_C=-150mA
-0.3 V I_C=-100mA, I_B=-10mA
-1.1 V I_C=-100mA, I_B=-10mA
V I_C=-100μA, I_E=0
V I_C=-1mA, I_B=0
V I_E=-10μA，I_C=0
MHz V_CE=-10V, I_C=-1mA
█ hFE Classification
O
70—140
Y
120—240
GR
200—400
BL1
350—510
BL2
480—700