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D283AG-00 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR
13005
4
100mm
D283AG-00
240±20µm
2830×2830µm 2
B 1200×420µm 2 E
1140×540µm 2
Tstg
Tj
PC
VCBO
VCEO
VEBO
IC
IC
IB
KSE13005 HE13005
Ta=25
TO-220
Tc=25
DC
Ta=25
TO-220
-55~150
150
75W
700V
400V
9V
4A
8A
2A
BVCEO(sus)
—
IEBO
—
hFE
VCE(sat)
—
VBE(sat)
—
Cob
fT
tON
tSTG
tF
400
10
8
*
*
65
4
V IC=10mA IB=0
1
mA VEB=9V IC=0
40
VCE=5V IC=1A
40
VCE=5V IC=2A
0.5
V IC=1A IB=0.2A
0.6
v IC=2A IB=0.5A
1
V IC=4A IB=1A
1.2
V IC=1A IB=0.2A
1.6
V IC=2A IB=0.5A
pF VCB=10V f=0.1MHz
MHz VCE=10V IC=0.5A
0.8
µs
4
µs
VCC=125V IC=2A,
0.9
µs
IB1=-IB2=0.4A