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D180BG-00 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR
13003
4
100mm
D180BG-00
240 20µm
1800 1800µm 2
B 320×320µm 2 E
200×300µm 2
Tstg
Tj
PC
VCBO
VCEO
VEBO
IC
IB
KSE13003 HE13003
Ta=25
TO-126/220
Tc=25
DC
Ta=25
TO-126/220
BVCEO
—
400
IEBO
—
hFE
10
5
VCE(sat)
—
VBE(sat)
—
fT
5
tON
tSTG
tF
-65~150
150
40W
700V
400V
9V
1.5A
0.75A
V IC=5mA IB=0
10
µA VEB=9V IC=0
40
VCE=5V IC=0.5A
VCE=2V IC=1A
0.5
V IC=0.5A IB=0.1A
1
V IC=1A IB=0.25A
3
V IC=1.5A IB=0.5A
1
V IC=0.5A IB=0.1A
1.2
V IC=1A IB=0.25A
MHz VCE=10V IC=0.1A,
f=1MHz
1.1 µS
Vcc=125V Ic=1A
4.0 µS
IB1=-IB2=0.2A
0.7 µS
RL=125Ω