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C105BJ-01 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR
NPN S I L I C O N T R A N S I S T O R
965
4
100mm
C105BJ-01
240 20µm
1050×1050µm 2
B 280×345µm 2 E
275×415µm 2
2SD965 HD965
Tstg
Tj
PC
VCBO
VCEO
VEBO
IC
Ta=25
Ta=25
ICBO
—
IEBO
—
BVCBO
—
BVCEO
—
BVEBO
—
hFE
VCE(sat)
—
fT
Cob
TO-92
TO-92
-55~150
150
0.75W
40V
20V
6V
5A
50
nA VCB=30V IE=0
50
nA VEB=6V IC=0
40
V IC=1mA IE=0
20
V IC=1mA IB=0
6
V IE=10u A IC=0
300
950
VCE=2V IC=0.5A
150
VCE=2V IC=2A
150
VCE=2V IC=0.15A
0.35
V IC=3A IB=0.1A
150
MHz VCB=6V IE=50mA
50
pF VCB=20V IE=0 f=1MHz