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C080BJ-04 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR
NPN S I L I C O N T R A N S I S T O R
667A
4
100mm
C080BJ-04
240±20µm
800×800µm 2
B 124×124µm2 E
221×110µm 2
Tstg
Tj
PC
VCBO
VCEO
VEBO
IC
Ta=25
TO-92L
TA=25
Ta=25
TO-92L
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
VBE(on)
fT
Cob
—
—
—
—
—
—
55~150
150
0.9W
120 V
100 V
5V
1A
120
V IC=10µA IE=0
100
V IC=1mA IB=0
5
V IE=10µA IC=0
10 µA VCB=100V IE=0
60
300
VCE=5V IC=150mA
30
VCE=5V IC=500mA
1
V IC=500mA IB=50mA
1.5
V VCE=5V IC=150mA
140
MHz VCE=5V IC=150mA
12
pF VCB=10V IE=0 f=1MHz