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C080BJ-01 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR
NPN S I L I C O N T R A N S I S T O R
2383
4
100mm
C080BJ-01
240±20µm
800×800µm 2
B 124×124µm 2 E
221×110µm 2
2SC2383
Tstg
Tj
PC
VCBO
VCEO
VEBO
IC
IB
Ta=25
TO-92L
Ta=25
Ta=25
TO-92L
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
Cob
—
—
—
—
—
—
—
-55~150
150
900mW
160V
160V
6V
1A
0.5A
160
V IC=100µA IE=0
160
V IC=10mA IB=0
6
V IE=100µA IC=0
1
µA VCB=150V IE=0
1
µA VEB=6V IC=0
60
320
VCE=5V IC=200 mA
1.5
V IC=500mA IB=50mA
0.45
0.75 V VCE=5V IC=5mA
20
100
MHz VCE=5V IC=200mA
20
pF VCB=10V IE=0 f=1MHz