AO3401 Datasheet, PDF (2/3 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

30V P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS ^{(TA = 25oC unless otherwise noted)}
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
BVDSS
RDS(on)
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
gfs
VGS = 0V, ID = -250uA
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -4A
VGS = -2.5V, ID =-1A
VDS =VGS, ID = -250uA
VDS = -24V, VGS = 0V
VGS = ± 12V, VDS = 0V
VDS = -5V, ID = -5A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = 20V, ID = 5.7A
VGS = 10V
VDD = 20V, RL=20Ω
ID = 1A, VGEN = 10V
RG = 6Ω
VDS = 8V, VGS = 0V
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD
IS = 1.8A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Min.
-30
-0.7
7
AO3401
Typ.
Miax.
Unit
V
42.0 64.0
64.0
75.0
mΩ
80.0 120.0
-1
-1.3
V
-1
uA
± 100 nA
11
S
9.4
2
nC
3
6.3
3.2
ns
38.2
12
954
115
pF
77
-2.2
A
-1.0
V
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semiconductor
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