 English |
|
|
|
|
|
|
|
| UMH15N Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Multi-Chip Built-in Resistors Transistor | |||
| |||
|
DIGITALTRANSISTOR (NPN+ NPN)
FEATURES
zTwo DTC144T chips in a package
zTransistor elements are independent, eliminating interference
zMounting cost and area can be cut in half.
External circuit
UMH15N
SOT-363
1
MARKING: H15
Absolute maximum ratings(Ta=25â)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V(BR)CBO
50
V
V(BR)CEO
50
V
V(BR)EBO
5
V
IC
100
mA
Collector Power dissipation
PC
150
mW
Junction temperature
Storage temperature
Tj
150
â
Tstg
-55~150
â
Electrical characteristics (Ta=25â)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
50
50
5
100
32.9
Typ Max. Unit
Conditions
V
IC=50μA
V
IC=1mA
V
IE=50μA
0.5 μA
VCB=50V
0.5 μA
VEB=4V
0.3
V
IC=10mA,IB=1mA
600
VCE=5V,IC=1mA
47
61.1 Kâ¦
250
MHz VCE=10V ,IE=-5mA,f=100MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese