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| UMD6N Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Dual NPN+PNP Digital Transistors | |||
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DIGITAL TRANSISTOR (NPN+ PNP)
FEATURES
z DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area can be cut in half.
External circuit
UMD6N
SOT-363
1
MARKING:D6
Absolute maximum ratings(Ta=25â)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
PC
Tj
Tstg
Limits
50
50
5
100
150
150
-55~150
Unit
V
V
V
mA
mW
â
â
Electrical characteristics (Ta=25â)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
50
50
5
100
3.29
Typ Max. Unit
Conditions
V IC=50μA
V IC=1mA
V IE=50μA
0.5
μA VCB=50V
0.5
μA VEB=4V
0.3
V IC=5mA,IB=0.25mA
600
VCE=5V,IC=1mA
4.7 6.11 Kâ¦
250
MHz VCE=10V ,IE=-5mA,f=100MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
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