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| UMD3N Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Digital Transistor | |||
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DUAL DIGITAL TRANSISTOR (NPN+ PNP)
FEATURES
z DTA114E and DTC114E transistors are built-in a package.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area can be cut in half.
External circuit
UMD3N
SOT-363
1
MARKING:D3
Absolute maximum ratings (Ta=25â)
Parameter
Symbol
Supply voltage
VCC
Input voltage
Output current
VIN
IO
IC(MAX)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25â)
Parameter
Symbol
Min.
Typ
Input voltage
VI(off)
VI(on)
3
Output voltage
VO(on)
Input current
II
Output current
DC current gain
IO(off)
GI
30
Input resistance
R1
7
10
Resistance ratio
R2/R1
0.8
1
Transition frequency
fT
250
Limits
50
-10~40
50
100
150(TOTAL)
150
-55~150
Max.
Unit
0.5
V
0.3
V
0.88
mA
0.5
μA
13
Kâ¦
1.2
MHz
Unit
V
V
mA
mW
â
â
Conditions
VCC=5V ,IO=100µA
VO=0.3V ,IO=10mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0
VO=5V,IO=5mA
VCE=10V ,IE=-5mA,f=100MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
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