STD123S Datasheet, PDF (1/2 Pages) AUK corp – NPN Silicon Transistor

STD1 23S
TRANSISTOR(NPN)
FEATURES
z Low saturation medium current application
z Extremely low collector saturation voltage
z Suitable for low voltage large current drivers
z High DC current gain and large current capability
z Low on resistance : R_ON=0.6Ω(Max.) (I_B=1mA)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Marking:123
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
20
15
6.5
1
350
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
On resistance
Symbol Test conditions
V _{(BR) CBO} I_C=50μA, I_E=0
V _{(BR) CEO} I_C =1mA, I_B=0
V _{(BR) EBO} I_E= 50μA, I_C=0
I_CBO
V_CB= 20 V, I_E=0
I_EBO
V_EB= 6V, I_C=0
h_FE
V_CE=1V, I_C= 100mA
V_CE (sat) I_C=500mA, I_B= 50mA
f_T
V_CE=5V, I_C=50mA
Cob
V_CB=10V, I_E=0, f=1MHz
f=1KHz,I_B=1mA,
R_ON
V_IN=0.3V
MIN
20
15
6.5
150
TYP
260
5
0.6
Units
V
V
V
A
mW
℃
℃
MAX
0.1
0.1
UNIT
V
V
V
μA
μA
0.3
V
MHz
pF
Ω
JinYu
semiconductor
www.htsemi.com