SS8550 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

SS8 550
TRANSISTOR(PNP)
FEATURES
 High Collector Current
 Complementary to SS8050
SOT–23
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-25
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-1.5
PC
Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
417
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
Collector cut-off current
ICBO
VCB=-40V, IE=0
Collector cut-off current
ICEO
VCE=-20V, IB=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
Collector-emitter saturation voltage
VCE(sat) IC=-800mA, IB=-80mA
Base-emitter saturation voltage
VBE(sat) IC=-800mA, IB=-80mA
Base-emitter voltage
VBE
VCE=-1V, IC=-10mA
Transition frequency
fT
VCE=-10V,IC=-50mA , f=30MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
MARKING
L
120–200
H
200–350
Y2
Min
Typ
Max Unit
-40
V
-25
V
-5
V
-100
nA
-100
nA
-100
nA
120
400
40
-0.5
V
-1.2
V
-1
V
100
MHz
20
pF
J
300–400
JinYu
semiconductor
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