SI2312 Datasheet, PDF (1/3 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – 20 V N-Channel Enhancement Mode MOSFET

20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ
RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ
RDS(ON), Vgs@1.8V, Ids@3.9A < 85mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
SI2312
D
SOT-23-3L
G
S
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.65
2.95
1.50
1.70
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90
1.00
0.10
0.40
0.85
REF.
1.30
0.20
-
1.15
0°
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
TA = 25^oC
TA = 75^oC
VDS
VGS
ID
IDM
PD
20
+8
4.9
15
0.75
0.48
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Junction-to-Ambient Thermal Resistance (PCB mounted)
RθJA
140
Unit
V
A
W
o_C
o_C/W
JinYu
semiconductor
www.htsemi.com