SD103AX Datasheet, PDF (1/1 Pages) Galaxy Semi-Conductor Holdings Limited – Schottky Barrier Diode

SD103AX
SCHOTTKY BARRIER DIODE
FEATURES
 Low Forward Voltage Drop
 Guard Ring Construction for Transient Protection
 Low Reverse Recovery Time
 Low Reverse Capacitance
SOD-523
___
MARKING: S4
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak Repetitive Reverse Voltage
VRWM
Working Peak Reverse Voltage
VR
DC Blocking Voltage
VR(RMS)
RMS Reverse Voltage
IO
Forward Continuous Current
IFRM
Repetitive Peak Forward Current @t≤1s
IFSM
Non-Repetitive Peak Forward Surge Current@8.3ms Half Sine Wave
PD
Power Dissipation
RΘJA
Thermal Resistance From Junction To Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
Value
Unit
40
V
28
350
1
15
150
667
125
-55~+150
V
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Reverse recovery time
Symbol
V(BR)
IR
VF
Ctot
trr
Test conditions
IR=100μA
VR=30V
VR=20V
VR=10V
IF=1mA
IF=5mA
IF=20mA
IF=200mA
VR=0V,f=1MHz
IF= IR=200mA, Irr=0.1×IR, RL=100Ω
Min Typ Max Unit
40
V
5
2
μA
1
0.27
0.32
V
0.37
0.6
50
pF
10
ns
JinYu
semiconductor
www.htsemi.com