SD103AW Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY BARRIER DIODES

SD103AW-SD103CW
SCHOTTKY DIODES
FEATURES
z Low forward voltage drop
z Guard ring construction for transient protection
z Negligible reverse recovery time
z Low reverse capacitance
SSOODD--112233
+
-
MARKING: SD103AW: S4
SD103BW: S5
SD103CW: S6
Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃
Parameter
Symbol SD103AW SD103BW SD103CW
Peak Repetitive Peak reverse voltage
V_RRM
Working Peak
V_RWM
40
30
20
DC Blocking Voltage
V_R
RMS Reverse Voltage
V_R(RMS)
28
21
14
Forward Continuous Current
I_FM
350
Repetitive Peak Forward Current @t≤1.0s
I_FRM
1.5
Power Dissipation
Pd
500
Thermal Resistance Junction to Ambient
R_θJA
250
Storage temperature
T_STG
-65~+150
Unit
V
V
mA
A
mW
℃/W
℃
Electrical Ratings @T_A=25℃
Parameter
Symbol Min. Typ. Max. Unit
Reverse Breakdown Voltage SD103AW
40
SD103BW V _(BR)R
30
V
SD103CW
20
Forward voltage
0.37
V_F
V
0.60
Reverse current
SD103AW
SD103BW I_RM
SD103CW
5.0
μA
Capacitance between terminals
C_T
50
pF
Reverse Recovery Time
t_rr
10
ns
Conditions
I_R=100μA
I_R=100μA
I_R=100μA
I_F=20mA
I_F=200mA
V_R=30V
V_R=20V
V_R=10V
V_R=0V,f=1.0MHz
I_F=I_R=200mA
Irr=0.1XI_R,R_L=100Ω
JinYu
semiconductor
www.htsemi.com