SD101AW Datasheet, PDF (1/2 Pages) Diodes Incorporated – SCHOTTKY BARRIER SWITCHING DIODE

SD101AW /SD101BW /SD101CW
SCHOTTKY DIODES
FEATURES
z Low Forward Voltage Drop
z Guard Ring Construction for Transient Protection
z Negligible Reverse Recovery Time
SOD-123
+
-
MARKING: SD101AW: S1
SD101BW: S2
SD101CW: S3
Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃
Parameter
Symbol
SD101AW
SD101BW
Peak Repetitive Peak reverse voltage
V_RRM
Working Peak
V_RWM
60
50
DC Blocking Voltage
V_R
RMS Reverse Voltage
V_R(RMS)
42
35
Forward Continuous Current
I_FM
15
Repetitive Peak Forward Current @t<1.0s
@t=10µs
I_FRM
50
2.0
Power Dissipation
Pd
500
Thermal Resistance Junction to Ambient
R_θJA
250
Storage temperature
T_STG
-65~+150
Electrical Ratings @T_A=25℃
Parameter
Symb
ol
Min.
Reverse Breakdown Voltage SD101AW
60
SD101BW V _(BR)R 50
SD101CW
40
Forward voltage
SD101AW
SD101BW
SD101CW VF
SD101AW
SD101BW
SD101CW
Reverse current
SD101AW
SD101BW IRM
SD101CW
Capacitance between terminals SD101AW
SD101BW C_T
SD101CW
Reverse Recovery Time
t_rr
Typ. Max. Unit
V
0.41
0.40
0.39
1.00
V
0.95
0.90
0.2
µA
2.0
2.1
pF
2.2
1．0 ns
SD101CW
40
28
Unit
V
V
mA
mA
A
mW
℃/W
℃
Conditions
IR=10µA
IR=10µA
IR=10µA
I_F=1.0mA
I_F=1.0mA
I_F=1.0mA
I_F=15mA
I_F=15mA
I_F=15mA
V_R=50V
V_R=40V
V_R=30V
V_R=0V,f=1.0MHz
I_F=I_R=5mA
Irr=0.1XI_R,R_L=100Ω
JinYu
semiconductor
www.htsemi.com