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| S9015 Datasheet, PDF (1/2 Pages) Weitron Technology – PNP General Purpose Transistors | |||
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S901 5
TRANSISTOR(PNP)
SOT-23
FEATURES
z Complementary to S9014
MARKING: M6
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-45
-5
-0.1
0.2
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Units
V
V
V
A
W
â
â
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE
Rank
Range
Symbol
Test conditions
V(BR)CBO IC= -100μA, IE=0
V(BR)CEO IC = -0.1mA, IB=0
V(BR)EBO IE=-100μA, IC=0
ICBO
VCB=-50 V, IE=0
IEBO
VEB= -5V, IC=0
hFE
VCE=-5V, IC= -1mA
VCE(sat) IC=-100mA, IB= -10mA
VBE(sat) IC=-100mA, IB=-10mA
VCE=-5V, IC= -10mA
fT
f=30MHz
L
200-450
MIN
-50
-45
-5
200
150
TYP MAX UNIT
V
V
V
-0.1
μA
-0.1
μA
1000
-0.3
V
-1
V
MHz
H
450-1000
JinYu
semiconductor
www.htsemi.com
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